Title :
A semiconductor YBaCuO microbolometer for room temperature IR imaging
Author :
Jahanzeb, Agha ; Travers, Christine M. ; Çelik-Butler, Zeynep ; Butler, Donald P. ; Tan, Stephen G.
Author_Institution :
Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
fDate :
10/1/1997 12:00:00 AM
Abstract :
The characteristics of infrared (IR) microbolometer arrays utilizing semiconducting YBaCuO and operating at room temperature are presented. Surface-micromachined structures in the form of 1×10 arrays of pixel size 40 μm×40 μm and 60 μm×60 μm as well as single pixels of various geometries were constructed. Using the chopped radiation from a broad-band IR source, the responsivity R V of the sensor was measured to be as high as 104 V/W and detectivity D* to be ~2×107 cm Hz1/2/W for a thermal conductance G~10-5 W/K between the detector and the substrate. The spectral response was found to be uniform over a range of 1-12 μm. Silicon micromachining and ambient-temperature processing were employed to ensure compatibility and, therefore, potential integration with CMOS-based signal processing circuitry. Methods of enhancing the figures of merit are discussed
Keywords :
arrays; barium compounds; bolometers; infrared imaging; micromachining; microsensors; semiconductor device testing; semiconductor materials; semiconductor technology; yttrium compounds; 1 to 12 mum; 1×10 arrays; 40 mum; 60 mum; Si micromachining; YBaCuO; ambient-temperature processing; broad-band IR source; chopped radiation; detectivity; figure of merit; microbolometer arrays; room temperature IR imaging; semiconducting YBaCuO; sensor responsivity; single pixels; spectral response; surface-micromachined structures; thermal conductance; Geometry; Infrared detectors; Infrared sensors; Radiation detectors; Semiconductivity; Substrates; Temperature sensors; Thermal conductivity; Thermal sensors; Yttrium barium copper oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
