Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

Author

Kim, Kyung Min ; Jeong, Woong Hee ; Kim, Dong Lim ; Rim, You Seung ; Choi, Yuri ; Ryu, Myung-Kwan ; Park, Kyung-Bae ; Kim, Hyun Jae

Author_Institution

Sch. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea

Volume

32

Issue

9

fYear

2011

Firstpage

1242

Lastpage

1244

Abstract

In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility μ_sat, whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltage V_th. We therefore obtain excellent device characteristics at 350°C with μ_sat of 1.57 cm²/V ·s, V_th of 1.28 V, an on/off ratio of ~1.4 × 10⁷, and a subthreshold gate swing of 0.59 V/dec.

Keywords

III-V semiconductors; aluminium compounds; indium compounds; low-temperature techniques; solution annealing; thin film transistors; AlInZnO-InZnO; charge accumulation; charge conductance; dual-channel thin-film transistors; high saturation mobility; low-temperature solution processing; temperature 350 degC; Annealing; Logic gates; Performance evaluation; Resistance; Temperature; Transistors; Zinc; Display device; indium zinc oxide (IZO); low temperature; solution process; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2160612

Filename

5957259