Title :
Degradation behavior of 850-nm vertical-cavity surface-emitting lasers with an air-post index-guide structure
Author :
Takeshita, Tatsuya ; Kagawa, Toshiaki ; Tateno, Kouta ; Tadanaga, Osamu ; Tohmori, Yuichi ; Amano, Chikara
Author_Institution :
NTT Photonics Labs., NTT Corp.Kanagawa, Kanagawa, Japan
fDate :
4/1/2002 12:00:00 AM
Abstract :
The degradation mechanism of a vertical-cavity surface-emitting laser (VCSEL) with an air-post structure is analyzed for stable optical parallel interconnection communication. It is clarified that the degradation is caused by the behavior of latent defects in the GaAs active layer. Decreasing the defects in the active region as well as decreasing the threshold current is important for obtaining a long-lifetime VCSEL
Keywords :
cathodoluminescence; electroluminescence; laser reliability; laser transitions; life testing; optical interconnections; quantum well lasers; semiconductor laser arrays; surface emitting lasers; waveguide lasers; 850 nm; Al0.15Ga0.85As-Al0.95Ga0.05 As; GaAs; GaAs active layer; VCSEL; air-post index-guide structure; degradation behavior; latent defects; long-lifetime VCSEL; stable optical parallel interconnection communication; threshold current; vertical-cavity surface-emitting lasers; Degradation; Fiber lasers; Gallium arsenide; Optical surface waves; Optical waveguides; Oxidation; Semiconductor lasers; Surface emitting lasers; Thermal resistance; Vertical cavity surface emitting lasers;
Journal_Title :
Lightwave Technology, Journal of
