Title :
A 20-mA-receive, 55-mA-transmit, single-chip GSM transceiver in 0.25-μm CMOS
Author :
Orsatti, Paolo ; Piazza, Francesco ; Huang, Qiuting
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
12/1/1999 12:00:00 AM
Abstract :
This paper presents a low-power 900-MHz GSM transceiver developed in a 0.25-μm CMOS technology. The superhet receiver, with a single intermediate frequency at 71 MHz, has an overall worst case noise figure of 8.1 dB, including all filters. The overall gain can be digitally controlled over 98-dB range. The receiver consumes only 19.5 mA from the 2.5-V voltage supply while achieving the required blocking and intermodulation performance. The direct conversion transmitter has a fully integrated phase shifter and provides a 2-mW signal to the power amplifier with a low level of spurious emissions. The transmitted Gaussian minimum shift keying signal has an RMS average phase error <2°, and the overall current consumption of the transmitter is 55 mA
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; cellular radio; gain control; low-power electronics; minimum shift keying; superheterodyne receivers; transceivers; 0.25 micron; 19.5 mA; 2.5 V; 55 mA; 71 MHz; 8.1 dB; 900 MHz; CMOS technology; Gaussian MSK signal; blocking performance; digitally controlled gain; direct conversion transmitter; fully integrated phase shifter; intermodulation performance; low-power GSM transceiver; minimum shift keying signal; single-chip GSM transceiver; superhet receiver; CMOS technology; Digital control; Filters; Frequency; GSM; Noise figure; Phase shifters; Transceivers; Transmitters; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
