Title :
High-speed distributed feedback laser and InGaAs avalanche photodiodes
Author :
Imai, Hajime ; Kaneda, Takao
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
11/1/1988 12:00:00 AM
Abstract :
Optical semiconductor devices, including InGaAsP/InP distributed feedback lasers and InGaAs avalanche photodiodes, are required for high-bit-rate transmission systems. In distributed-feedback lasers, it is important to increase the 3-dB bandwidth, to reduce the frequency chirping, and to stabilize the longitudinal mode under large signal modulation. For avalanche photodiodes, high gain-bandwidth product, low multiplication noise, low multiplied dark current, and low capacitance are key factors. How to realize these characteristics is discussed
Keywords :
III-V semiconductors; avalanche photodiodes; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical modulation; III-V semiconductors; InGaAs; InGaAsP-InP; avalanche photodiodes; capacitance; dark current; distributed feedback laser; frequency chirping; high-bit-rate transmission systems; multiplication noise; optical semiconductor devices; signal modulation; Avalanche photodiodes; Distributed feedback devices; High speed optical techniques; Indium gallium arsenide; Laser feedback; Laser modes; Laser noise; Optical devices; Optical feedback; Semiconductor lasers;
Journal_Title :
Lightwave Technology, Journal of
