DocumentCode :
1276874
Title :
480-GHz 
in InP/GaAsSb/InP DHBT With New Base Isolation 
-Airbridge Design
Author :
Zaknoune, M. ; Mairiaux, E. ; Roelens, Y. ; Waldhoff, N. ; Rouchy, U. ; Frijlink, P. ; Rocchi, M. ; Maher, H.
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol., Villeneuve d´´Ascq, France
Volume :
33
Issue :
10
fYear :
2012
Firstpage :
1381
Lastpage :
1383
Abstract :
Self-aligned 0.55×3.5 μm2 emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an ft of 310 GHz and an fmax of 480 GHz are reported. Common-emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance CBC.
Keywords :
III-V semiconductors; capacitance; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device breakdown; submillimetre wave transistors; DHBT; InP-GaAsSb-InP; base isolation μ-airbridge design; base-collector capacitance; breakdown voltage measurement; common-emitter current gain; frequency 310 GHz; frequency 480 GHz; self-aligned emitter double heterojunction bipolar transistors; triple-mesa process; voltage 4.6 V; Capacitance; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Junctions; Metals; Double heterojunction bipolar transistor (DHBT); GaAsSb/InP; MOCVD; high $f_{max}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2210187
Filename :
6291746
Link To Document :
