DocumentCode
1277030
Title
An empirical table-based FET model
Author
Angelov, Iltcho ; Rorsman, Niklas ; Stenarson, Jörgen ; Garcia, Mikael ; Zirath, Herbert
Author_Institution
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
47
Issue
12
fYear
1999
fDate
12/1/1999 12:00:00 AM
Firstpage
2350
Lastpage
2357
Abstract
A new large-signal FET model combining empirical and table-based models was developed and investigated experimentally. The Chalmers empirical model was used as an envelope for the measured data for main parameters of the model. Combining empirical and table-based models improves accuracy and simplifies as well as speeds extraction. The procedure can be applied for other types of devices
Keywords
equivalent circuits; field effect transistors; microwave field effect transistors; semiconductor device models; Chalmers empirical model; empirical table-based FET model; large-signal FET model; Circuit simulation; Data mining; Design optimization; Equations; Europe; FETs; HEMTs; Microwave technology; Predictive models; Spline;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.808981
Filename
808981
Link To Document