DocumentCode
1277038
Title
A general parameter-extraction method for transistor noise models
Author
Stenarson, Jörgen ; Garcia, Mikael ; Angelov, Iltcho ; Zirath, Herbert
Author_Institution
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
47
Issue
12
fYear
1999
fDate
12/1/1999 12:00:00 AM
Firstpage
2358
Lastpage
2363
Abstract
A general direct extraction procedure for transistor noise models that includes two correlated noise sources is developed. Using direct extraction methods instead of optimization make it possible to study the frequency dependence of the model parameters. The extraction procedure is demonstrated for a silicon carbide MESFET, using both PRC and Pospieszalski models. The extracted models show good agreement with measured noise parameters
Keywords
equivalent circuits; microwave transistors; semiconductor device models; semiconductor device noise; transistors; FET; HBT; PRC model; Pospieszalski model; SiC; SiC MESFET; correlated noise sources; direct extraction methods; frequency dependence; general parameter-extraction method; model parameters; transistor noise models; Circuit noise; Data mining; Equations; Equivalent circuits; FETs; Frequency dependence; Microwave technology; Noise measurement; Space technology; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.808982
Filename
808982
Link To Document