Title :
A general parameter-extraction method for transistor noise models
Author :
Stenarson, Jörgen ; Garcia, Mikael ; Angelov, Iltcho ; Zirath, Herbert
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
12/1/1999 12:00:00 AM
Abstract :
A general direct extraction procedure for transistor noise models that includes two correlated noise sources is developed. Using direct extraction methods instead of optimization make it possible to study the frequency dependence of the model parameters. The extraction procedure is demonstrated for a silicon carbide MESFET, using both PRC and Pospieszalski models. The extracted models show good agreement with measured noise parameters
Keywords :
equivalent circuits; microwave transistors; semiconductor device models; semiconductor device noise; transistors; FET; HBT; PRC model; Pospieszalski model; SiC; SiC MESFET; correlated noise sources; direct extraction methods; frequency dependence; general parameter-extraction method; model parameters; transistor noise models; Circuit noise; Data mining; Equations; Equivalent circuits; FETs; Frequency dependence; Microwave technology; Noise measurement; Space technology; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
