Title :
Silicon molecular-beam epitaxy
Author :
Kubiak, Richard ; Parker, Evan
Author_Institution :
City of London Polytechnic, Solid Research Group, Department of Physics, London, UK
Abstract :
Epitaxial silicon is being used increasingly in many semiconductor devices, and is a major contender for use in VLSI and VHSIC technologies. Molecular-beam epitaxy is a new technique for growing epitaxial silicon at low temperatures which permits unprecedented control over doping profiles
Journal_Title :
Electronics and Power
DOI :
10.1049/ep.1984.0468
