A compact V-band 3-D MMIC single-chip down-converter using photosensitive BCB dielectric film

Author

Nishikawa, Kiisa ; Sugitani, S. ; Kamogawa, K. ; Tokumitsu, T. ; Toyoda, Ichihiko ; Tanaka, Mitsuru

Author_Institution

NTT Network Innovation Labs., Yokosuka

Volume

47

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2512

Lastpage

2518

Abstract

A high-density monolithic-microwave integrated-circuit (MMIC) V-band down-converter, which employs the masterslice three-dimensional (3-D) MMIC technology and photosensitive benzocyclobutene (BCB) dielectric film, is presented. The 3-D MMIC process reduces the turn-around time by 66% compared to the polyimide-based fabrication process. The BCB-based process offers flexible metal configurations and high yields. The down-converter is structured on an 8×2 master array in a 1.84 mm×0.87 mm chip. A newly developed down-converter MMIC with a heterostructure MESFET with f_max of 130 GHz consists of a two-stage radio-frequency amplifier and an image rejection mixer with an intermodulation frequency amplifier. This MMIC demonstrates a gain of 19.3 dB and an image rejection ratio of above 18 dB in the frequency range of 56.5-59.5 GHz; its associated gain density is five times higher than that of conventional MMIC´s. This paper clarifies the design criteria for 3-D MMIC packaging using the flip-chip bonding technique. The BCB-based 3-D MMIC technology with flip-chip bonding will realize much cheaper millimeter-wave wireless equipment

Keywords

MESFET integrated circuits; MMIC frequency convertors; dielectric thin films; field effect MIMIC; flip-chip devices; integrated circuit design; integrated circuit packaging; integrated circuit yield; millimetre wave frequency convertors; organic compounds; 0.87 mm; 1.84 mm; 130 GHz; 19.3 dB; 3D MMIC packaging; 56.5 to 59.5 GHz; V-band 3D MMIC single-chip down-converter; benzocyclobutene; design criteria; flexible metal configurations; flip-chip bonding technique; gain density; heterostructure MESFET; high yield; image rejection mixer; image rejection ratio; intermodulation frequency amplifier; masterslice three-dimensional MMIC technology; millimeter-wave wireless equipment; photosensitive BCB dielectric film; turn-around time; two-stage radio-frequency amplifier; Bonding; Dielectric films; Fabrication; Gain; MESFETs; MMICs; Millimeter wave technology; Packaging machines; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.809000

Filename

809000