An LDMOS VHF class-E power amplifier using a high-Q novel variable inductor

Author

Zirath, Herbert ; Rutledge, David B.

Author_Institution

Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

47

Issue

12

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

2534

Lastpage

2538

Abstract

In this paper, an lateral diffused metal-oxide-semiconductor-based very high-frequency class-E power amplifier has been investigated theoretically and experimentally. Simulations were verified by amplifier measurements and a record-high class-E output power was obtained at 144 MHz, which is in excellent agreement with simulations. The key of the results is the use of efficient device models, simulation tools, and the invention of a novel high-Q inductor for the output series resonance network. The latter allows for low losses in the output network and, simultaneously, a wide tuning range for maximum output power or maximum efficiency optimization

Keywords

MOSFET circuits; VHF amplifiers; circuit simulation; circuit tuning; inductors; network topology; power amplifiers; 144 MHz; 54 W; 70 percent; LDMOS VHF class-E power amplifier; amplifier measurements; class-E output power; device models; high-Q novel variable inductor; low losses; maximum efficiency optimization; maximum output power; output series resonance network; simulation tools; switched-mode class-E amplifier; wide tuning range; Frequency; High power amplifiers; Inductors; Power amplifiers; Power generation; RLC circuits; Semiconductor optical amplifiers; Switches; Topology; VHF circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.809003

Filename

809003