Title : 
Corrections to “Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias” [Jun 12 225-232]
         
        
            Author : 
Karmarkar, Aditya P. ; Xu, Xin ; Yeap, Kong-Boon ; Zschech, E.
         
        
            Author_Institution : 
Synopsys (India) Private Ltd., Hyderabad, India
         
        
        
        
        
        
        
            Abstract : 
In the above titled paper (ibid., vol. 12, no. 2, pp. 225-232, June 2012), Fig. 1 did not appear correctly. The corrected Fig. 1 is presented here.
         
        
            Keywords : 
Charge carrier mobility; Copper; Integrated circuit reliability; Three-dimensional integrated circuits; Through-silicon vias;
         
        
        
            Journal_Title : 
Device and Materials Reliability, IEEE Transactions on
         
        
        
        
        
            DOI : 
10.1109/TDMR.2012.2209531