Title :
New low capacitance transverse junction stripe AlGaAs/GaAs laser for planar laser-MESFET integration
Author :
Brillouet, F. ; Rao, E.V.K. ; Beerens, J.
Author_Institution :
Lab. de Bagneux, CNET
fDate :
1/21/1988 12:00:00 AM
Abstract :
A transverse junction stripe laser structure with a very low parasitic capacitance, compatible with an entirely planar laser-MESFET integration, is presented. The laser, obtained by two successive n (S) and p(Zn) diffusions across undoped AlGaAs/GaAs double heterostructure layers, has a threshold current of Ith =55 mA. A very low parasitic capacitance Cs=0.6 pF is measured, with a corresponding rolloff time constant of tr=9 ps
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; 0.6 pF; 55 mA; 9 ps; AlGaAs-GaAs:S,Zn; III-V semiconductors; OEIC; TJS type; integrated optoelectronics; low capacitance; planar laser-MESFET integration; rolloff time constant; semiconductor lasers; successive diffusions; threshold current; transverse junction stripe;
Journal_Title :
Electronics Letters
