Inertial sensor technology using DRIE and wafer bonding with connecting capability

Author

Ishihara, Kei ; Yung, Chi-Fan ; Ayón, Arturo A. ; Schmidt, Martin A.

Author_Institution

Microsystems Technol. Lab., MIT, Cambridge, MA, USA

Volume

8

Issue

4

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

403

Lastpage

408

Abstract

A novel device structure utilizing deep reactive ion etching (DRIE) technology and aligned wafer bonding was developed. In this structure, an interconnecting scheme for electrical signal routing with signal crossovers is realized. Also, the `footing effect´ and the `bowing effect,´ which are inherent in DRIE processes, were investigated in detail. A mask layout strategy for solving the footing effect was developed. A novel two-step etching process was developed for solving the bowing effect. Lateral accelerometers (one axis and two-axis) were successfully fabricated using this technology

Keywords

accelerometers; inertial systems; microsensors; sputter etching; wafer bonding; accelerometer; bowing effect; deep reactive ion etching; electrical signal routing; fabrication technology; footing effect; high aspect ratio structure; inertial sensor; interconnecting layer; mask layout; micromechanical device; notching effect; signal crossover; wafer bonding; Accelerometers; Chemical technology; Electrodes; Etching; Integrated circuit interconnections; Integrated circuit technology; Laboratories; Routing; Silicon; Wafer bonding;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.809054

Filename

809054