• DocumentCode
    1277600
  • Title

    Multiresistance Characteristics of PCRAM With \\hbox {Ge}_{1}\\hbox {Cu}_{2}\\hbox {Te}_{3} and \\hbox </h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Saito, Yuta ; Song, Yun Heub ; Lee, Jung Min ; Sutou, Yuji ; Koike, Junichi</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>33</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2012</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1399</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1401</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) and Ge<sub>1</sub>Cu<sub>2</sub>Te<sub>3</sub> (GCT) are utilized as phase-change materials to realize high and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10<sup>3</sup>, 10<sup>4</sup>, and 10<sup>5</sup> Ω were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>antimony compounds; copper compounds; crystallisation; germanium compounds; phase change materials; phase change memories; random-access storage; semiconductor thin films; GCT; GST; Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>; GeCuTe; crystallization temperature; current pulse selection; device structure; melting point; middle-resistance states; multilevel cell operation; multiple PCRAM device; multiresistance characteristics; phase-change materials; phase-change random access memory; Crystallization; Phase change random access memory; Resistance; Stress; Temperature measurement; Writing; <formula formulatype=$hbox{Ge}_{1}hbox{Cu}_{2}hbox{Te}_{3}$ (GCT); $hbox{Ge}_{2}hbox{Sb}_{2}hbox{Te}_{5}$ (GST); multilevel cell (MLC); phase-change random access memory (PCRAM);

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2210534
  • Filename
    6293847
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1277600