Recent progress in semiconductor laser amplifiers

Author

Saitoh, Tadashi ; Mukai, Takaaki

Author_Institution

Basic Res. Lab., NTT, Tokyo, Japan

Volume

6

Issue

11

fYear

1988

fDate

11/1/1988 12:00:00 AM

Firstpage

1656

Lastpage

1664

Abstract

Recent progress in semiconductor laser amplifiers (SLAs), mainly GaInAsP traveling-wave semiconductor laser amplifiers (TWAs) for use in optical fiber transmission systems, is discussed. The status of antireflection coating on laser-diode facets which are indispensable for TWAs is discussed. Reported data on small-signal gain, signal-gain saturation, and noise are summarized and discussed in relation to active-layer parameters. Common amplification using SLAs for the amplification of various multiplexed signals, including interchannel crosstalk, is also described. A thick, short active-layer structure for a broadband high-output-power low-noise TWA with polarization-insensitive signal gain is proposed

Keywords

III-V semiconductors; antireflection coatings; crosstalk; gallium arsenide; noise; optical communication equipment; semiconductor junction lasers; GaInAsP; III-V semiconductors; SLA; TWA; antireflection coating; interchannel crosstalk; multiplexed signals; noise; optical fiber transmission systems; semiconductor laser amplifiers; signal-gain saturation; small-signal gain; traveling-wave semiconductor laser amplifiers; Coatings; Crosstalk; Fiber lasers; Laser noise; Optical fiber amplifiers; Optical fibers; Optical noise; Semiconductor device noise; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.9981

Filename

9981