DocumentCode
1277941
Title
Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor
Author
Vertiatchikh, A.V. ; Eastman, L.F. ; Schaff, W.J. ; Prunty, T.
Author_Institution
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Volume
38
Issue
8
fYear
2002
fDate
4/11/2002 12:00:00 AM
Firstpage
388
Lastpage
389
Abstract
The effect of SiN passivation of the surface of AlGaN/GaN transistors is reported. Current deep level transient spectroscopy (DLTS) measurements were performed on the device before and after the passivation by a SiN film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device. The DLTS spectrum obtained from the measurement of the passivated device showed a significantly lower peak for this trap. The discrepancy in the DLTS peak amplitude is explained by the effect of the passivation on the surface traps and underlines the surface nature of the major defect noticed in the device
Keywords
III-V semiconductors; aluminium compounds; deep level transient spectroscopy; electron traps; gallium compounds; junction gate field effect transistors; passivation; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN heterostructure field effect transistor; SiN; SiN film; deep level transient spectroscopy; electron trap; surface passivation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020270
Filename
998343
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