DocumentCode :
1278009
Title :
Electrical Measurement of the Thermal Impedance of Bipolar Transistors
Author :
El Rafei, Abdelkader ; Sommet, Raphaël ; Quere, Raymond
Author_Institution :
XLIM Lab., Limoges Univ., Brive-la-Gaillarde, France
Volume :
31
Issue :
9
fYear :
2010
Firstpage :
939
Lastpage :
941
Abstract :
In this letter, we present a characterization method for the determination of the thermal impedance of heterostructure bipolar transistors. The thermal impedance was characterized using low-frequency S-parameter measurements. We will show that our method can be used to characterize the thermal impedance independent of the transistor size.
Keywords :
S-parameters; bipolar transistors; electric impedance measurement; thermal variables measurement; electrical measurement; heterostructure bipolar transistors; low-frequency S-parameter measurements; thermal impedance; Bipolar transistors; Current measurement; Electric variables measurement; Frequency measurement; Gallium arsenide; HEMTs; Impedance; Impedance measurement; MODFETs; Optical feedback; Performance evaluation; Scattering parameters; Size measurement; Temperature measurement; Transistors; $S$ -parameters; Bipolar transistors; thermal feedback; thermal impedance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2052232
Filename :
5530347
Link To Document :
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