• DocumentCode
    1278103
  • Title

    AC output conductance of SOI MOSFETs and impact on analog applications

  • Author

    Sinitsky, Dennis ; Tu, Robert ; Liang, Chunlin ; Chan, Mansun ; Bokor, Jeffrey ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • Volume
    18
  • Issue
    2
  • fYear
    1997
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    We report a frequency-dependent output conductance of partially depleted SOI MOSFETs. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V/sub d/ is two times higher than the dc I-V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.
  • Keywords
    MOSFET; silicon-on-insulator; AC output conductance; body charging capacitance; dynamic range; high-frequency analog applications; partially depleted SOI MOSFET; Capacitance; Circuit simulation; Digital circuits; Doping; Dynamic range; Fabrication; Frequency; Impact ionization; Implants; MOSFET circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.553036
  • Filename
    553036
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1278103