Title :
High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films
Author :
Serikawa, Tadashi ; Omata, Fujio
Author_Institution :
Cyberspace Labs., NTT Corp., Tokyo, Japan
fDate :
5/1/2002 12:00:00 AM
Abstract :
We have developed a low-temperature fabrication process (⩽ 200°C for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO2 films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm2/V·s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs
Keywords :
elemental semiconductors; hydrogenation; laser beam annealing; plasma materials processing; recrystallisation annealing; semiconductor device manufacture; silicon; sputter deposition; thin film transistors; 200 C; Si-SiO2; active-Si films; electrical characteristics; excimer laser irradiation crystallization; flexible stainless-steel foils; gate-SiO2 films; inductively coupled plasma hydrogenation; low-temperature fabrication process; mobilities; n-channel poly-Si TFTs; p-channel poly-Si TFTs; polycrystalline Si TFTs; sputter deposition; sputtered Si films; thin-film transistors; Crystallization; Laser ablation; Optical coupling; Optical device fabrication; Plasmas; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
