AC hot-carrier-induced degradation in NMOSFETs with N/sub 2/O-based gate dielectrics

Author

Zeng, Xu ; Lai, P.T. ; Ng, W.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong

Volume

18

Issue

2

fYear

1997

Firstpage

39

Lastpage

41

Abstract

Frequency-dependent ac-stress-induced degradation in MMOSFETs with N/sub 2/O-grown and N/sub 2/O-nitrided gate oxides was investigated. Suppressed device degradation is observed in both N/sub 2/O-based devices as compared to SiO/sub 2/ device for frequency up to 100 kHz, which is attributed to nitrogen incorporation in the gate oxides, Moreover, when comparing the two N/sub 2/O-based oxides, N/sub 2/O-grown oxide device exhibits enhanced degradation than N/sub 2/O-nitrided oxide device. Charge pumping measurements reveal that N/sub 2/O-nitrided oxide has better immunity to interface-state and neutral-electron-trap generation under dynamic stress.

Keywords

MOSFET; electron traps; hot carriers; interface states; nitridation; 100 kHz; AC hot-carrier-induced degradation; N/sub 2/O; N/sub 2/O nitridation; NMOSFET; charge pumping; dynamic stress; gate dielectric; interface-state generation; neutral-electron-trap generation; nitrogen incorporation; Charge pumps; Dielectrics; Electron traps; Frequency; Hot carriers; MOSFET circuits; Nitrogen; Oxidation; Stress measurement; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553037

Filename

553037