• DocumentCode
    1278238
  • Title

    A high-voltage monolithic isolator for a communication network interface

  • Author

    Akiyama, Noboru ; Kojima, Yasuyuki ; Nemoto, Minehiro ; Yukutake, Seigo ; Iwasaki, Takayuki ; Amishiro, Masatsugu ; Kanekawa, Nobuyasu ; Watanabe, Atsuo ; Takeuchi, Yusuke

  • Author_Institution
    Res. Lab., Hitachi Ltd., Ibaraki, Japan
  • Volume
    49
  • Issue
    5
  • fYear
    2002
  • fDate
    5/1/2002 12:00:00 AM
  • Firstpage
    895
  • Lastpage
    901
  • Abstract
    We have developed a multichannel monolithic isolator that can provide 2.3 kV ac isolation and 100-MHz signal transmission. The isolator uses high-voltage, on-chip isolator technology including trench isolation with buried oxide on the silicon-on-oxide (SOI) substrate and 0.4 μm CMOS driver and receiver circuits. This technology lets us produce a four-channel monolithic isolator with an area of 1.5 mm2 and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. These operating values suggest that the monolithic isolator can miniaturize the communication interface and reduce power consumption since discrete devices, such as transformers and opto-couplers, are unnecessary. We have also developed a one-chip modem interface LSI that includes the multichannel isolator and an analog front-end circuit
  • Keywords
    CMOS integrated circuits; buried layers; isolation technology; large scale integration; modems; power integrated circuits; silicon-on-insulator; telecommunication networks; 0.4 micron; 0.5 mA; 100 MHz; 2.3 kV; 50 MHz; AC isolation; CMOS driver circuit; CMOS receiver circuit; SOI substrate; analog front-end circuit; buried oxide; communication network interface; high-voltage multichannel monolithic isolator; power consumption; signal transmission; single-chip modem interface LSI; trench isolation; CMOS technology; Communication networks; Driver circuits; Energy consumption; Frequency; Isolation technology; Isolators; Large scale integration; Modems; Transformers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.998600
  • Filename
    998600