Title :
Modeling of the CoolMOSTM transistor. II. DC model and parameter extraction
Author :
Daniel, Bobby J. ; Parikh, Chetan D. ; Patil, Mahesh B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fDate :
5/1/2002 12:00:00 AM
Abstract :
An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given
Keywords :
SPICE; parameter estimation; power MOSFET; semiconductor device models; CoolMOS power transistor; JFET; SPICE subcircuit; dc model; device simulation; drift region; effective voltages; highly accurate model; intrinsic MOSFET; parameter extraction; Circuit simulation; Doping; MOSFET circuits; Parameter extraction; Power MOSFET; Power system modeling; Power transistors; SPICE; Semiconductor process modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
