A simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices

Author

He, Jin ; Wang, Yangyuan ; Zhang, Xing ; Xi, Xuemei ; Chan, Mansun ; Huang, Ru ; Hu, Chenming

Author_Institution

Dept. of Comput. Sci., California Univ., Berkeley, CA, USA

Volume

49

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

933

Lastpage

937

Abstract

In this brief, an approximate solution of the breakdown voltage for a 6H-SiC parallel-plane junction is presented. Then a simple method for optimization of 6H-SiC punch-through junctions used in both unipolar and bipolar power devices is performed. It is shown that the reciprocal of the punch-through factor should be 16/21=0.76 for the optimum punch-through junctions used in 6H-SiC unipolar power devices and 5/21=0.24 for bipolar power devices. Analytical expressions for the optimal base doping concentration and base thickness are obtained as a function of the breakdown voltage subject to minimum constraints on the on-state resistance and base width for unipolar power and bipolar power devices, respectively

Keywords

power semiconductor devices; semiconductor device breakdown; semiconductor junctions; silicon compounds; wide band gap semiconductors; 6H-SiC punch-through junction; SiC; base doping concentration; bipolar power device; breakdown voltage; design optimization; on-state resistance; parallel-plane junction; punch-through factor; unipolar power device; Breakdown voltage; Charge carrier processes; Doping; Electric breakdown; Electric resistance; Helium; Ionization; Optimization methods; Silicon carbide; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.998606

Filename

998606