Title :
Experimental verification of the dependence of bipolar transistor flicker noise on power dissipation
Author :
Forbes, L. ; Zhang, C.W. ; Zhang, B.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
5/1/2002 12:00:00 AM
Abstract :
Low-frequency 1/f or flicker noise in the frequency range of Hz to kHz has been identified and demonstrated to be described by temperature fluctuations in heat conduction in bipolar transistors operated at higher power densities. The noise power spectral density has been shown to depend upon the increase in device temperature above the ambient temperature
Keywords :
1/f noise; bipolar transistors; flicker noise; heat conduction; semiconductor device noise; 1/f noise; bipolar transistor; flicker noise; heat conduction; low-frequency noise; noise power spectral density; power dissipation; temperature fluctuations; 1f noise; Bipolar transistors; Equivalent circuits; Fluctuations; Frequency; Heat sinks; Low-frequency noise; Phase noise; Power dissipation; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
