Title :
A guideline for designing chalcogenide-based glasses for threshold switching characteristics
Author :
Prakash, S. ; Asokan, S. ; Ghare, D.B.
Author_Institution :
Dept. of Instrumentations, Indian Inst. of Sci., Bangalore, India
Abstract :
Chalcogenide-based switching materials have potential applications in power control and information storage. In this work, an approach has been suggested to design chalcogenide-based amorphous materials for threshold or memory switching characteristics. Using this guideline, glasses have been formed in a new chalcogenide Al-Ge-As-Te system. All the samples studied have been found to exhibit threshold switching characteristics, which proves the validity of the suggested guideline.
Keywords :
aluminium compounds; chalcogenide glasses; electrical conductivity transitions; germanium compounds; semiconductor switches; Al-Ge-As-Te; amorphous material; chalcogenide glass; information storage; memory switching; power control; threshold switching; Amorphous materials; Atomic measurements; Bonding; Composite materials; Crystalline materials; Crystallization; Glass; Guidelines; Material storage; Tellurium;
Journal_Title :
Electron Device Letters, IEEE
