Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

Author

Liu, Leitao ; Kumar, S. Bala ; Ouyang, Yijian ; Guo, Jing

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

58

Issue

9

fYear

2011

Firstpage

3042

Lastpage

3047

Abstract

The performance limits of monolayer transition metal dichalcogenide ( MX₂) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX₂. We find the lattice structures of monolayer MX₂ remain the same as the bulk MX₂. Within the ballistic regime, the performances of monolayer MX₂ transistors are better compared with those of the silicon transistors if a thin high-κ gate insulator is used. This makes monolayer MX₂ promising 2-D materials for future nanoelectronic device applications.

Keywords

MOSFET; ballistic transport; high-k dielectric thin films; nanoelectronics; 2D transition MX₂; ab initio theory; ballistic MOSFET model; ballistic regime; high-κ gate insulator; lattice structures; monolayer MX₂ transistors; monolayer transition metal dichalcogenide transistors; nanoelectronic device applications; performance limits; silicon transistors; Atomic layer deposition; Logic gates; MOSFET circuits; Photonic band gap; Silicon; Transistors; 2-D transition metal dichalcogenide $(hbox{MX}_{2})$; Ab initio theory; ballistic transport; band structure calculation; new direct-gap semiconductor;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2159221

Filename

5959195