GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers

Author

Chang, Chung-Ying ; Chang, Shoou-Jinn ; Liu, C.H. ; Li, Shuguang ; Lin, T.K.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

20

fYear

2012

Firstpage

1809

Lastpage

1811

Abstract

In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.

Keywords

III-V semiconductors; dislocations; elemental semiconductors; gallium compounds; light emitting diodes; optical fabrication; quantum well devices; semiconductor doping; semiconductor epitaxial layers; semiconductor quantum wells; silicon; wide band gap semiconductors; GaN-Si; LED output power; Si-DD layers; current spreading; delta-doping layers; dislocation suppression; double strain releasing MQW; epitaxial layers; forward voltage; in-plane direction; light-emitting diodes; multiquantum wells; reverse breakdown voltage; voltage 35 V to 125 V; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Silicon; Strain; GaN; Si delta-doping (Si-DD); light-emitting diodes (LEDs); strain release multiquantum well (MQW);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2216517

Filename

6294429