Title :
GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers
Author :
Chang, Chung-Ying ; Chang, Shoou-Jinn ; Liu, C.H. ; Li, Shuguang ; Lin, T.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this letter, we report the fabrication of GaN-based light-emitting diodes (LEDs) with double strain releasing multiquantum wells and Si delta-doping (Si-DD) layers. We find that Si-DD can enhance current spreading in the in-plane direction and also suppress dislocation in the epitaxial layers. By inserting the Si-DD layers, we find that we can achieve a smaller forward voltage. We also find that we can significantly increase the reverse breakdown voltage from 35 to 125 V by introducing Si-DD layers. Furthermore, we find that the output power of the LED with Si-DD is more than 10% larger than that of the LED without Si-DD.
Keywords :
III-V semiconductors; dislocations; elemental semiconductors; gallium compounds; light emitting diodes; optical fabrication; quantum well devices; semiconductor doping; semiconductor epitaxial layers; semiconductor quantum wells; silicon; wide band gap semiconductors; GaN-Si; LED output power; Si-DD layers; current spreading; delta-doping layers; dislocation suppression; double strain releasing MQW; epitaxial layers; forward voltage; in-plane direction; light-emitting diodes; multiquantum wells; reverse breakdown voltage; voltage 35 V to 125 V; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Silicon; Strain; GaN; Si delta-doping (Si-DD); light-emitting diodes (LEDs); strain release multiquantum well (MQW);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2216517
