DocumentCode :
1278550
Title :
Novel Negative Vt Shift Phenomenon of Program–Inhibit Cell in \\hbox {2}X{-}\\hbox {3}X\\hbox {-}</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Aritome, Seiichi ; Seo, Soonok ; Kim, Hyung-Seok ; Park, Sung-Kye ; Seok-Kiu Lee ; Sungjoo Hong</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>R&D Div, SK Hynix Inc., Icheon, South Korea</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>59</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2012</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2950</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2955</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>A novel program-inhibit phenomenon of “negative” cell <i>Vt</i> shift has been investigated for the first time in 2<i>X</i>- 3<i>X</i>-nm self-aligned shallow trench isolation nand Flash memory cells. The negative <i>Vt</i> shift is caused in an inhibit cell when along-word-line adjacent cell is programming. The magnitude of the negative shift becomes larger in the case of higher program voltage (<i>V</i><sub>PGM</sub>), lower field oxide height, slower program speed of the adjacent cell, and high <i>Vt</i> of victim cell. The experimental results suggest that the mechanism of negative <i>Vt</i> shift is attributed to hot holes that are generated by FN electron injection from channel/junction to the control gate. This phenomenon will become worse with cell size scaling since hot hole generation is increased by increasing the electron injection due to narrower floating gate space. Therefore, this negative <i>Vt</i> shift phenomenon is one of the new scaling limiters of nand Flash memory cell, which needs to be managed for 2 and 3 b/cell in 2<i>X</i> nm and beyond nand Flash memories.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>NAND circuits; flash memories; FN electron injection; along-word-line adjacent cell; cell size scaling; control gate; field oxide height; floating gate space; hot hole generation; negative voltage shift phenomenon; program-inhibit cell phenomenon; self-aligned STI NAND flash memory; self-aligned shallow trench isolation NAND flash memory cells; Charge carrier processes; Couplings; Flash memory; Hot carriers; Programming; Substrates; FN tunneling; Flash memory; program disturb; self-aligned shallow trench isolation (STI) (SA-STI);</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2012.2212198</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6294438</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1278550' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1278550</a></div> </div> </div> <div class='leftDiv labelDiv leftAlign backLinkEnglish'><a href='javascript:history.back()'><img src='../CSS/Back.png' class='backImage' alt=