Title :
Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures
Author :
Verbitskaya, E. ; Abreu, M. ; Bartsch, V. ; Bell, W. ; Berglund, P. ; Bol, J. ; de Boer, W. ; Borer, K. ; Buontempo, S. ; Casagrande, L. ; Chapuy, S. ; Cindro, V. ; Ambrosio, N.D. ; Da Viá, C. ; Devine, S.R.H. ; Dezillie, B. ; Dierlamn, A. ; Dimcovski, Z.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
fDate :
2/1/2002 12:00:00 AM
Abstract :
We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection
Keywords :
electric fields; hole traps; neutron effects; silicon radiation detectors; Large Hadron Collider experiments; Si; cryogenic detectors; detector operating parameters; electric field distribution; electric field manipulation; equivalent neutron fluences; free carrier injection; full depletion voltage; high neutron fluences; hole injection; nonequilibrium carriers; Astronomy; Degradation; Detectors; Laboratories; Large Hadron Collider; Low voltage; Neutrons; Physics; Silicon; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.998650
