• DocumentCode
    1278589
  • Title

    Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

  • Author

    Verbitskaya, E. ; Abreu, M. ; Bartsch, V. ; Bell, W. ; Berglund, P. ; Bol, J. ; de Boer, W. ; Borer, K. ; Buontempo, S. ; Casagrande, L. ; Chapuy, S. ; Cindro, V. ; Ambrosio, N.D. ; Da Viá, C. ; Devine, S.R.H. ; Dezillie, B. ; Dierlamn, A. ; Dimcovski, Z.

  • Author_Institution
    A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
  • Volume
    49
  • Issue
    1
  • fYear
    2002
  • fDate
    2/1/2002 12:00:00 AM
  • Firstpage
    258
  • Lastpage
    263
  • Abstract
    We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection
  • Keywords
    electric fields; hole traps; neutron effects; silicon radiation detectors; Large Hadron Collider experiments; Si; cryogenic detectors; detector operating parameters; electric field distribution; electric field manipulation; equivalent neutron fluences; free carrier injection; full depletion voltage; high neutron fluences; hole injection; nonequilibrium carriers; Astronomy; Degradation; Detectors; Laboratories; Large Hadron Collider; Low voltage; Neutrons; Physics; Silicon; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.998650
  • Filename
    998650