DocumentCode
1278589
Title
Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures
Author
Verbitskaya, E. ; Abreu, M. ; Bartsch, V. ; Bell, W. ; Berglund, P. ; Bol, J. ; de Boer, W. ; Borer, K. ; Buontempo, S. ; Casagrande, L. ; Chapuy, S. ; Cindro, V. ; Ambrosio, N.D. ; Da Viá, C. ; Devine, S.R.H. ; Dezillie, B. ; Dierlamn, A. ; Dimcovski, Z.
Author_Institution
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Volume
49
Issue
1
fYear
2002
fDate
2/1/2002 12:00:00 AM
Firstpage
258
Lastpage
263
Abstract
We present a study of the modeling of the electric field distribution, which is controlled by injection and trapping of nonequilibrium carriers, in Si detectors irradiated by high neutron fluences. An analytical calculation of the electric field distribution in detectors irradiated by neutrons up to fluences of 1 · 1014 to 5 · 1015 cm-2 shows the possibility of reducing the full depletion voltage at low temperatures via hole injection. For this calculation, we use the detector operating parameters and equivalent neutron fluences expected for Large Hadron Collider experiments. The results of the calculation are in good qualitative agreement with published experimental data, lending strong support for the model and for an earlier proposal of electric field manipulation by free carrier injection
Keywords
electric fields; hole traps; neutron effects; silicon radiation detectors; Large Hadron Collider experiments; Si; cryogenic detectors; detector operating parameters; electric field distribution; electric field manipulation; equivalent neutron fluences; free carrier injection; full depletion voltage; high neutron fluences; hole injection; nonequilibrium carriers; Astronomy; Degradation; Detectors; Laboratories; Large Hadron Collider; Low voltage; Neutrons; Physics; Silicon; Temperature distribution;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.998650
Filename
998650
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