Title :
Rapid degradation of MESFETs under impact ionization and low-temperature conditions
Author :
Martí-Canales, Javier
Author_Institution :
Eur. Space Res. & Technol. Centre, Noordwijk, Netherlands
Abstract :
Tests performed on power MESFETs under impact ionization and low-temperature conditions reveal a faster and higher device degradation than those at higher temperatures. Degradation produces a noticeable reduction in breakdown voltage together with an increase in gate leakage current. The same effect is exhibited in high-temperature tests, but is less severe. In this paper, the temperature effect of the degradation on the performance of high output power microwave devices under impact ionization conditions is illustrated.
Keywords :
electric breakdown; impact ionisation; leakage currents; life testing; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; semiconductor device testing; 0 to 100 C; MESFET degradation; breakdown voltage; gate leakage current; high output power microwave devices; impact ionization; low-temperature conditions; power MESFET; temperature effect; Degradation; Impact ionization; Leakage current; Life testing; MESFETs; Microwave devices; Microwave transistors; Performance evaluation; Power generation; Temperature dependence;
Journal_Title :
Electron Device Letters, IEEE
