Rapid degradation of MESFETs under impact ionization and low-temperature conditions

Author

Martí-Canales, Javier

Author_Institution

Eur. Space Res. & Technol. Centre, Noordwijk, Netherlands

Volume

18

Issue

2

fYear

1997

Firstpage

66

Lastpage

68

Abstract

Tests performed on power MESFETs under impact ionization and low-temperature conditions reveal a faster and higher device degradation than those at higher temperatures. Degradation produces a noticeable reduction in breakdown voltage together with an increase in gate leakage current. The same effect is exhibited in high-temperature tests, but is less severe. In this paper, the temperature effect of the degradation on the performance of high output power microwave devices under impact ionization conditions is illustrated.

Keywords

electric breakdown; impact ionisation; leakage currents; life testing; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; semiconductor device testing; 0 to 100 C; MESFET degradation; breakdown voltage; gate leakage current; high output power microwave devices; impact ionization; low-temperature conditions; power MESFET; temperature effect; Degradation; Impact ionization; Leakage current; Life testing; MESFETs; Microwave devices; Microwave transistors; Performance evaluation; Power generation; Temperature dependence;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.553046

Filename

553046