DocumentCode
1278642
Title
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET´s
Author
Auth, Christopher P. ; Plummer, James D.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
18
Issue
2
fYear
1997
Firstpage
74
Lastpage
76
Abstract
We present a scaling theory for fully-depleted, cylindrical MOSFET´s. This theory was derived from the cylindrical form of Poisson´s equation by assuming a parabolic potential in the radial direction. Numerical device simulation data for subthreshold slope and DIBL were compared to the model to validate the formula. By employing the scaling theory a comparison with double-gate (DG) MOSFET´s was carried out illustrating an improvement of up to 40% in the minimum effective channel length for the cylindrical device.
Keywords
MOSFET; semiconductor device models; DIBL; Poisson equation; cylindrical device; fully-depleted type; minimum effective channel length; model; numerical device simulation data; scaling theory; subthreshold slope; surrounding-gate MOSFET; Dielectric constant; Dielectric measurements; Geometry; Logic devices; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor devices; Silicon compounds; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.553049
Filename
553049
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