Title :
High-efficiency power amplifier integrated with antenna
Author :
Radisic, Vesna ; Chew, Siou Teck ; Qian, Yongxi ; Itoh, Tatsuo
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
2/1/1997 12:00:00 AM
Abstract :
Two class B GaAs field-effect transistor (FET) power amplifiers integrated with patch antennas have been designed and fabricated at 2.48 GHz. Both amplifiers are integrated with patch antennas, which serve as load and radiator. In one case, a standard patch design was used with random harmonic termination. In another case, a modified patch design was used, which allows the tuning of the second harmonic. In this case the antenna has an additional function of a filter. An increase of 7% in the power-added efficiency (PAE) and 0.5 dB in the output power was achieved through the second harmonic tuning
Keywords :
III-V semiconductors; active antennas; gallium arsenide; microstrip antennas; microwave power amplifiers; 2.48 GHz; GaAs; class B GaAs field-effect transistor power amplifier; integration; patch antenna; power-added efficiency; random harmonic termination; second harmonic tuning; FETs; Frequency; High power amplifiers; Impedance measurement; Patch antennas; Power amplifiers; Power generation; Power harmonic filters; Resonance; Tuning;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
