Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers

Author

Uchiyama, S. ; Yokouchi, N. ; Ninomiya, T.

Author_Institution

Optoelectron. Furukawa Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

9

Issue

2

fYear

1997

Firstpage

141

Lastpage

142

Abstract

We introduced ion-beam assisted deposition in order to improve the quality of Al₂O₃ and SiO₂, which were used as part of the mirrors of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers (VCSELs). The refractive index of Al₂O₃ was improved to 1.63 from 1.56 and the one of SiO₂ increased to 1.47 from 1.45. Low-threshold room-temperature continuous-wave (CW) operation of 1.3-μm VCSEL with the improved mirrors was demonstrated. The threshold current was 2.4 mA at 20/spl deg/C. The CW operating temperature was raised to 36/spl deg/C, which is a record high temperature for 1.3-μm VCSEL.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion beam applications; laser beams; laser cavity resonators; laser mirrors; optical fabrication; quantum well lasers; refractive index; surface emitting lasers; 1.3 mum; 2.4 mA; 20 C; 36 C; Al/sub 2/O/sub 3/; CW operating temperature; GaInAsP-InP; SiO/sub 2/; continuous-wave operation; ion-beam assisted deposition; low-threshold room-temperature continuous-wave operation; mirrors; refractive index; threshold current; vertical-cavity surface-emitting lasers; Chemical lasers; MOCVD; Mirrors; Quantum well devices; Refractive index; Semiconductor lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553065

Filename

553065