A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD

Author

Osowski, M.L. ; Lammert, R.M. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

9

Issue

2

fYear

1997

Firstpage

158

Lastpage

160

Abstract

Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source with integrated electroabsorption modulators and a passive Y-junction coupler. Threshold current values of 9.5 and 10.1 mA are obtained for two distinct wavelength sources operating continuous-wave (CW) coupled into the same output waveguide.

Keywords

III-V semiconductors; aluminium compounds; electroabsorption; gallium arsenide; indium compounds; integrated optoelectronics; optical couplers; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; wavelength division multiplexing; 10.1 mA; 9.5 mA; InGaAs-GaAs-AlGaAs; Y-junction coupler; continuous-wave; dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source; dual-wavelength source; integrated electroabsorption modulators; monolithically integrated electroabsorption modulators; output waveguide; passive Y-junction coupler; selective-area MOCVD; three-step selective-area metal-organic chemical vapor deposition; threshold current values; wavelength sources; Laser tuning; MOCVD; Optical coupling; Optical crosstalk; Optical device fabrication; Optical pumping; Optical sensors; Optical waveguides; Waveguide lasers; Wavelength division multiplexing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553073

Filename

553073