Title :
Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm
Author :
Ha, W. ; Gambin, V. ; Wistey, M. ; Bank, S. ; Seongsin Kim ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fDate :
5/1/2002 12:00:00 AM
Abstract :
Results from a ridge waveguide laser diode (LD) structure, with three GaInNAs quantum wells (QWs) and GaNAs barriers, are presented. The sample was grown by solid source molecular beam epitaxy with an RF plasma nitrogen source. These devices differ from previously reported GaInNAs QWs LDs that used GaAs as the barrier material. The introduction of nitrogen into the barriers reduces the spectral blue shift caused by post-growth annealing. Long wavelength emission out to 1.405 μm was observed. The devices exhibited threshold current densities as low as 1.5 kA/cm2, high differential efficiency of 0.67 W/A, and a maximum output power of 350 mW."
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; spectral line shift; waveguide lasers; 1.405 micron; 350 mW; GaInNAs QWs LDs; GaInNAs quantum wells; GaInNAs-GaNAs; GaInNAs-GaNAs ridge-waveguide MQW laser diodes; GaNAs barriers; RF plasma nitrogen source; barrier material; high differential efficiency; long wavelength emission; maximum output power; multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes; post-growth annealing; solid source molecular beam epitaxy; spectral blue shift; threshold current densities; Diode lasers; Molecular beam epitaxial growth; Nitrogen; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Quantum well devices; Radio frequency; Solids;
Journal_Title :
Photonics Technology Letters, IEEE
