High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source

We demonstrate high performance, /spl lambda/=1.3- and 1.4-μm wavelength InGaAsN-GaAs-InGaP quantum-well (QW) lasers grown lattice-matched to GaAs substrates by gas source molecular beam epitaxy (GSMBE) using a solid As source. Threshold current densities of 1.15 and 1.85 kA/cm² at /spl lambda/=1.3 and 1.4 μm, respectively, were obtained for the lasers with a 7-μm ridge width and a 3-mm-long cavity. Internal quantum efficiencies of 82% and 52% were obtained for /spl lambda/=1.3 and 1.4 μm emission, respectively, indicating that nonradiative processes are significantly reduced in the quantum well at /spl lambda/=1.3 μm due to reduced N-H complex formation. These Fabry-Perot lasers also show high characteristic temperatures of T₀=122 K and 100 K at /spl lambda/=1.3 and 1.4 μm, respectively, as well as a low emission wavelength temperature dependence of (0.39/spl plusmn/0.01) nm//spl deg/C over a temperature range of from 10/spl deg/C to 60/spl deg/C.