Asymmetric quantum wells with enhanced QCSE: modulation behaviour and application for integrated laser/modulator

Author

Steinmann, Philipp ; Borchert, Bernd ; Stegmuller, Bernhard

Author_Institution

Corp. Res. & Dev., Siemens AG, Munich, Germany

Volume

9

Issue

2

fYear

1997

Firstpage

191

Lastpage

193

Abstract

We have optimized asymmetric InGaAsP QWs with respect to the quantum confined Stark effect (QCSE). We have found structures with a red shift of 40 meV at a field of 70 kV/cm. Moreover, it was our aim to find structures with a strong blue shift. A new principle for the integration of a laser and a modulator is presented, which is based on the application of blue shift asymmetric QW´s in the active layer for laser and modulator simultaneously. A calculation of the laser and modulation properties for a QW-structure with 27 meV blue shift at a field variation of 70 kV/cm is presented.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser theory; optimisation; quantum confined Stark effect; quantum well lasers; red shift; semiconductor device models; semiconductor quantum wells; spectral line shift; 27 meV; 40 meV; QW-structure; active layer; asymmetric InGaAsP QW optimisation; asymmetric QWs; asymmetric quantum wells; blue shift; enhanced QCSE; field variation; integrated laser/modulator; modulation behaviour; modulation properties; quantum confined Stark effect; red shift; strong blue shift; Absorption; Chirp modulation; Electrons; Optical computing; Optoelectronic devices; Potential well; Quantum cascade lasers; Quantum well lasers; Refractive index; Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.553087

Filename

553087