Improvement of thermal and mechanical reliability of a LDMOS FET using graphene

Author

Weifeng Zhou ; Liang Zhou ; Jun-Fa Mao ; Wen-Yan Yin

Author_Institution

Key Lab. of Minist. of Educ. of Design & Electromagn. Compatibility of High-Speed Electron. Syst., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

474

Lastpage

477

Abstract

This paper introduces a novel material, few layer graphene (FLG) to theoretically improve the thermal and mechanical reliability of an laterally diffused metal oxide semiconductor (LDMOS) field effect transistor (FET) under high power microwave (HPM) pulses. With graphene attached locally, on the hot spot between the gate and drain of the LDMOS. The transient lateral temperature distribution of FLG is analytically derived, and then the thermal and mechanical reduction can be calculated using our 2-D finite element method (FEM) electro-thermal-stress (E-T-S) code. The maximum temperature of the silicon region can be decreased by 35 K, and the stress of copper can be lowered by almost 16 MPa.

Keywords

MOSFET; copper; finite element analysis; semiconductor device reliability; silicon; temperature distribution; 2D finite element method; C; LDMOS FET; electrothermal-stress code; graphene; high power microwave pulses; laterally diffused metal oxide semiconductor field effect transistor; mechanical reliability; thermal reliability; transient lateral temperature distribution; Electromagnetic compatibility; Graphene; Heating; Silicon; Stress; Thermal stresses; Transient analysis; E-T-S; FEM; FLG; LDMOS; device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC Europe), 2014 International Symposium on

Conference_Location

Gothenburg

Type

conf

DOI

10.1109/EMCEurope.2014.6930953

Filename

6930953