Title :
CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics
Author :
Beck, Dietmar ; Herrmann, Michael ; Kasper, Erich
Author_Institution :
Stuttgart Univ., Germany
fDate :
7/1/1997 12:00:00 AM
Abstract :
The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ). A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 Ω·cm) and standard CMOS substrates (CZ, n-type, 4-6 Ω·cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs
Keywords :
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; field effect MIMIC; integrated circuit design; losses; semiconductor materials; silicon; zone melting; CMOS; FZ-high resistivity substrate; RF-substrate losses; Si-SiGe; device characteristics; direct transfer; float zone method; millimeter-wave integrated circuits; process design; readout electronics; CMOS process; Dielectric losses; Dielectric substrates; Millimeter wave circuits; Millimeter wave integrated circuits; Millimeter wave technology; Monolithic integrated circuits; Radio frequency; Silicon; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
