Title :
Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
7/1/1997 12:00:00 AM
Abstract :
A novel iteration scheme for the self-consistent solution of the Schrodinger-Poisson system in semiconductor devices is presented. The information from the eigenvalue problem is used to obtain a nonlinear Poisson equation that can be solved with the Newton method. The scheme has good stability properties and fast convergence. Examples are presented for the one-dimensional (1-D) calculation of quantized states in surface-channel and buried-channel MOS devices
Keywords :
MOSFET; Newton method; Schrodinger equation; eigenvalues and eigenfunctions; numerical stability; semiconductor device models; Newton method; Schrodinger equation; Schrodinger-Poisson system; buried-channel MOS devices; eigenvalue problem; fast convergence; implicit iteration; nonlinear Poisson equation; one-dimensional calculation; quantized states; self-consistent solution; semiconductor devices; stability properties; surface-channel MOS devices; Effective mass; Eigenvalues and eigenfunctions; Electrons; Electrostatics; Energy states; Newton method; Poisson equations; Schrodinger equation; Semiconductor devices; Stability;
Journal_Title :
Electron Devices, IEEE Transactions on
