Self-consistent solution of the Schrodinger equation in semiconductor devices by implicit iteration

Author

Pacelli, A.

Author_Institution

Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy

Volume

44

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1169

Lastpage

1171

Abstract

A novel iteration scheme for the self-consistent solution of the Schrodinger-Poisson system in semiconductor devices is presented. The information from the eigenvalue problem is used to obtain a nonlinear Poisson equation that can be solved with the Newton method. The scheme has good stability properties and fast convergence. Examples are presented for the one-dimensional (1-D) calculation of quantized states in surface-channel and buried-channel MOS devices

Keywords

MOSFET; Newton method; Schrodinger equation; eigenvalues and eigenfunctions; numerical stability; semiconductor device models; Newton method; Schrodinger equation; Schrodinger-Poisson system; buried-channel MOS devices; eigenvalue problem; fast convergence; implicit iteration; nonlinear Poisson equation; one-dimensional calculation; quantized states; self-consistent solution; semiconductor devices; stability properties; surface-channel MOS devices; Effective mass; Eigenvalues and eigenfunctions; Electrons; Electrostatics; Energy states; Newton method; Poisson equations; Schrodinger equation; Semiconductor devices; Stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.595946

Filename

595946