Title :
Photodetector for 1550 nm formed in silicon-on-insulator slab waveguide
Author :
Ackert, Jason J. ; Murray, K.J. ; Jessop, Paul E. ; Knights, Andrew P.
Author_Institution :
McMaster Univ., Hamilton, ON, Canada
Abstract :
A report is presented of a monolithic silicon photodetector compatible with silicon-on-insulator photonic wire waveguides. The detectors comprise a pin junction with enhanced sensitivity to 1550 nm through the introduction of deep levels via ion-implantation and post-process thermal annealing. These detectors are particularly suited to evanescent sensor applications.
Keywords :
annealing; deep levels; integrated optics; ion implantation; optical waveguides; p-n junctions; photodetectors; silicon-on-insulator; Si; deep levels; evanescent sensor applications; ion-implantation; monolithic silicon photodetector; pin junction; post-process thermal annealing; silicon-on-insulator photonic wire waveguides; silicon-on-insulator slab waveguide; wavelength 1550 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.2484
