Simple model for space-charge region capacitance of an exponential-constant p-n junction

Depletion layer properties have been calculated for an exponential-constant p-n junction in silicon by using a simple model. Closed-form expressions are presented for the built-in voltage V_bi and the offset voltage correction Delta V, respectively, for this junction. These formulas allow the depletion capacitance to be accurately determined from a given value of applied voltage V_a by manual calculations. The results obtained can readily be extended to other semiconductor materials and other diffused p-n junctions.