InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

Author

Kuo, C.H. ; Chang, S.J. ; Su, Y.K. ; Chen, J.F. ; Wu, L.W. ; Sheu, J.K. ; Chen, C.H. ; Chi, G.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

23

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

240

Lastpage

242

Abstract

Mg-doped GaN epitaxial layers were annealed in pure O/sub 2/ and pure N/sub 2/. It was found that we could achieve a low-resistive p-type GaN by pure O/sub 2/ annealing at a temperature as low as 400/spl deg/C. With a 500/spl deg/C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O/sub 2/ were both smaller than those values observed from InGaN/GaN LED annealed in pure N/sub 2/. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.

Keywords

III-V semiconductors; annealing; gallium compounds; indium compounds; light emitting diodes; semiconductor epitaxial layers; 400 degC; 500 degC; InGaN-GaN; InGaN/GaN; annealing temperature; dynamic resistance; forward voltage; incomplete activation; light emitting diodes; low-resistive p-type epilayer; Contact resistance; Epitaxial growth; Epitaxial layers; Furnaces; Gallium nitride; Light emitting diodes; Microelectronics; Rapid thermal annealing; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.998863

Filename

998863