Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

Author

Lee, Hyeokjae ; Lee, Jong-Ho ; Park, Young June ; Min, Hong Shick

Author_Institution

CMOS Device Design, Chartered Semicond. Manuf., Singapore

Volume

23

Issue

5

fYear

2002

fDate

5/1/2002 12:00:00 AM

Firstpage

288

Lastpage

290

Abstract

In this letter, we propose that f/sub T/ and f/sub max/ properties in partially depleted SOI devices were analyzed in terms of gate electrode layout, body instability, and body resistance of multifinger structure. The speed characteristics were a strong function of the number of fingers and gate types such as T-gate and H-gate structures and were evaluated by g/sub m/ variation (/spl Delta/g/sub m/), extra parasitic capacitance (/spl Delta/C/sub gs/), and ac body instability.

Keywords

MOSFET; UHF field effect transistors; UHF measurement; capacitance; characteristics measurement; semiconductor device measurement; silicon-on-insulator; H-gate; RF-SOI MOSFETs; Si; T-gate; ac body instability; body instability; body resistance; characterization issues; gate electrode layout; gate geometry; multifinger structure; parasitic capacitance; partially depleted SOI devices; speed characteristics; CMOS technology; Cutoff frequency; Electrodes; Fingers; Geometry; Immune system; MOSFETs; Noise figure; Radio frequency; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.998879

Filename

998879