Six-terminal MOSFET´s: modeling and applications in highly linear, electronically tunable resistors

Author

Vavelidis, Kostas ; Tsividis, Yannis P. ; Eynde, Frank Op´t ; Papananos, Yannis

Author_Institution

Div. of Comput. Sci., Nat. Tech. Univ. of Athens, Greece

Volume

32

Issue

1

fYear

1997

fDate

1/1/1997 12:00:00 AM

Firstpage

4

Lastpage

12

Abstract

The electrical properties of a six-terminal MOSFET are studied and a strong-inversion model is derived. Due to its special structure, the six-terminal MOSFET can be operated as a highly-linear, electronically-tunable resistor. This is managed by applying proper voltages at the terminals of the structure, achieving channel uniformity independent of applied signals. Measurements on fabricated test devices yield distortion levels of -90 dB for 1 V_p-p signals

Keywords

BiCMOS analogue integrated circuits; MOSFET; circuit tuning; electric distortion; resistors; semiconductor device models; 1 V; BiCMOS analogue ICs; channel uniformity; distortion levels; electronically tunable resistors; fabricated test devices; six-terminal MOSFETs; strong-inversion model; Computer science; Distortion measurement; FETs; Helium; Linearization techniques; MOSFET circuits; Nonlinear filters; Resistors; Semiconductor process modeling; Testing; Tunable circuits and devices; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.553170

Filename

553170