Investigation of step-doped channel heterostructure field-effect transistor

Author

Laih, L.-W. ; Tsai, J.H. ; Wu, C.-Z. ; Heng, S. Y C ; Liu, W.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

144

Issue

5

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

309

Lastpage

312

Abstract

A new heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile has been fabricated and demonstrated. The SDCFET studied provides the advantages of high current density, high breakdown voltage, wide gate voltage swing for high transconductance, and adjustable threshold voltage. A simple model is employed to analyse the performance of threshold voltage. For comparison two kinds of SDCFETs have been fabricated. For the 1×100 μm² gated dimension, maximum drain saturation currents of 735 and 675 mA/mm, maximum transconductances of 200 and 232 mS/mm. Gate breakdown voltages of 15 and 12 V, wide gate voltage swing of 3.3 and 2.6 V with transconductance g_m higher than 150 mS/mm, and threshold voltage -3.7 and -1.8 V are obtained, respectively. These good performance figures show the SDCFET has good potential for high-speed, high-power circuit applications

Keywords

III-V semiconductors; current density; doping profiles; electric breakdown; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; 12 V; 15 V; 150 to 232 mS/mm; InGaAs; InGaAs step-doped-channel; adjustable threshold voltage; heterostructure field-effect transistor; high breakdown voltage; high current density; high transconductance; high-power circuit applications; high-speed applications; model; step-doped channel HFET; step-doped-channel profile; wide gate voltage swing;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19971479

Filename

629482