Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride

The results of experimental and theoretical studies of low-frequency noise in wide-bandgap semiconductors and wide-band-gap semiconductor devices are reviewed. The unusual features of the low-frequency noise in these systems include an extremely low level of noise in SiC and SiC-based devices and a large difference in the noise level in GaN-based films and GaN-based field effect transistors (FETs) (with the noise being much smaller in GaN-based FETs). The authors also report on the generation recombination noise in SiC and GaN-based materials and devices