Title :
Noise in hydrogenated amorphous silicon
Author :
Johanson, R.E. ; Günes, M. ; Kasap, S.O.
Author_Institution :
Dept. of Electr. Eng., Saskatchewan Univ., Saskatoon, Sask., Canada
fDate :
2/1/2002 12:00:00 AM
Abstract :
Published work on conductance fluctuations in hydrogenated amorphous silicon is surveyed. There are many reports of 1/f noise, some describing unusual features such as nonGaussian statistics. The relative insensitivity to doping and temperature is highlighted. In addition to the 1/f noise, random-telegraph-like noise is often reported. The successes and failures of generation-recombination models for 1/f noise and current filament models for the telegraph noise are summarised
Keywords :
1/f noise; amorphous semiconductors; current fluctuations; elemental semiconductors; flicker noise; hydrogen; hydrogenation; percolation; reviews; silicon; 1/f noise; Si:H; conductance fluctuations; current filament models; doping insensitivity; flicker noise; generation-recombination models; hydrogenated amorphous silicon; noise model; noise power spectrum; nonGaussian statistics; percolation threshold; random-telegraph-like noise; temperature insensitivity;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:20020333
