A balanced CMOS OpAmp with high EMI immunity

Author

Subrahmanyam, Boyapati ; Das, Divya ; Baghini, Maryam Shojaei ; Redoute, Jean-Michel

Author_Institution

IITB-Monash Res. Acad., Indian Inst. of Technol. Bombay, Mumbai, India

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

703

Lastpage

708

Abstract

In this paper a balanced CMOS operational amplifier which has higher electromagnetic interference (EMI) immunity compared to a double differential amplifier and standard Miller operational amplifier, has been introduced. The proposed amplifier has better EMI immunity, from 1 MHz - 1 GHz, by keeping specifications such as gain, -3 dB bandwidth, phase margin, power supply rejection and unity gain frequency same as in the Miller operational amplifier. Analysis and simulation results are compared when an EMI signal of 1.1 Vpp applied at the input terminal. The simulation results show that the EMI-induced offset voltage is lesser over a wide range of frequencies for the proposed amplifier.

Keywords

CMOS integrated circuits; differential amplifiers; electromagnetic interference; operational amplifiers; EMI immunity; Miller operational amplifier; balanced CMOS operational amplifiers; double differential amplifier; electromagnetic interference; frequency 1 MHz to 1 GHz; phase margin; power supply rejection; unity gain frequency; CMOS integrated circuits; Capacitance; Differential amplifiers; Electromagnetic compatibility; Electromagnetic interference; Gain; Transistors; CMOS; electromagnetic interference immunity; operational amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC Europe), 2014 International Symposium on

Conference_Location

Gothenburg

Type

conf

DOI

10.1109/EMCEurope.2014.6930995

Filename

6930995